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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA110N055T
IXTP110N055T
V DSS
I D25
R DS(on)
= 55 V
= 110 A
≤ 7.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
55
55
V
V
V GSM
Transient
± 20
V
G
S
I D25
I LRMS
I DM
I AR
E AS
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
110
75
300
25
750
A
A
A
A
mJ
TO-220 (IXTP)
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 ?
3
V/ns
G
D
S
(TAB)
P D
T C = 25 ° C
230
W
G = Gate
D = Drain
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
-55 ... +175
175
-55 ... +175
300
260
° C
° C
° C
° C
° C
S = Source TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
M d
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Low package inductance
- easy to drive and to protect
Weight
TO-220
TO-263
3
2.5
g
g
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
V GS(th) V DS = V GS , I D = 100 μ A
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
I GSS
I DSS
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
± 200
2
250
nA
μ A
μ A
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
R DS(on)
V GS = 10 V, I D = 25 A, Notes 1, 2
5.8
7.0
m ?
Applications
? 2006 IXYS CORPORATION All rights reserved
DS99625 (11/06)
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相关代理商/技术参数
IXTA110N055T2 功能描述:MOSFET 110 Amps 55V 0.0066 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA110N055T7 功能描述:MOSFET 110 Amps 55V 6.7 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA120N04T2 功能描述:MOSFET 120 Amps 40V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA120N075T2 功能描述:MOSFET 120 Amps 75V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA120P065T 功能描述:MOSFET -120 Amps -65V 0.01 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA120P065T T/R 制造商:IXYS Corporation 功能描述:
IXTA12N50P 功能描述:MOSFET 12.0 Amps 500 V 0.5 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA130N065T2 功能描述:MOSFET 130 Amps 65V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube